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| WEITRON Surface Mount Schottky Barrier Diodes Features: *Extremely Fast Switching Speed *Low Forward Voltage *Very Small Conduction Losses *Schottky Barrier Diodes Encapsulated in a SOT-323 Package Description: These schottky barrier diodes are designed for high speed switching applications circuit protection, and voltage clamping, Extremely low forward voltage reduces conduction loss, Miniature surface mount package is excellent for hand held and portable applications where space is limited. WSD715F/WSD717F WSD706F SMALL SIGNAL SCHOTTKY DIODES 30m AMPERES 40-45 VOLTS 3 1 2 SOT-323(SC-70) SOT-323 Outline Demensions Unit:mm A SOT-323 B C T OP V IE W D E G H K L J M Dim A B C D E G H J K L M Min 0.30 1.15 2.00 0.30 1.20 1.80 0.00 0.80 0.42 0.10 Max 0.40 1.35 2.40 0.65 0.40 1.40 2.20 0.10 1.00 0.53 0.25 WEITRON hpp://www.weitron.com.tw WSD715F/WSD717F WSD706F WEITRON Symbol VR IF(AV) IFSM TJ Tstg WSD715 40 30 200 -55 to +125 -55 to +125 WSD717F WSD706F 45 Unit Volts mA mA C C Maximum Ratings (TA=25 C Unless otherwise noted) Characteristic Reverse Voltage Average Rectifier Forward Current Peak Surge Forward Current(1) Operating Junction Temperature Range Storage Temperature Range Electrical Characteristics Characteristic (TA=25 C Unless otherwise noted) Symbol V(BR)R Min 40 45 0.37 2.0 1.0 Typ Max Unit Volts Volts Reverse Breakdown Voltage (IR=10A) WSD715F/WSD717F WSD706F Forward Voltage IF=1.0mA Total Capacitance (VR=1.0V, f=1.0MHz) Reverse Leakage VR=10V 1. 60HE for 1 VF CT IR PF Adc Device Marking Item WSD715F WSD717F WSD706 JD JE JF Marking 3D 3E 3J Eqivalent Circuit diagram 3 3 3 1 2 1 2 1 2 WEITRON http://www.weitron.com.tw WSD715F/WSD717F WSD706F Electrical characteristic curves(Ta=25 C) 1000m 100 Typ. pulse measurement 80 60 40 20 0 FORWARD CURRENT : IF (A) 100m 10m Io CURRENT (%) Ta =1 2 5 C Ta= 75 C 1m 100 10 1 Ta=25 C Ta = - 25 C 0 25 50 75 100 125 AMBIENT TEMPERATURE : Ta( C ) 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 FORWARD VOLTAGE : V (V) F FIG1. Derating curve (mounting on glass epoxy PCBs) FIG2. Forward characteristics CAPACITANCE BETWEEN TERMINALS : CT (pF) 100 Ta =125 C 100 50 f =1MHz Ta =25 C REVERSE CURRENT : IR (A) 10 Ta =75 C 20 10 5 1 Ta =25 C 100n 10n Ta= -25 C 2 1 1n Typ. pulse measurement 0 5 10 15 20 25 30 35 REVERSE VOLTAGE : VR (V) 0 2 4 6 8 10 12 14 REVERSE VOLTAGE : VR (V) FIG3. Reverse characteristics FIG4. Capacitance between terminals characteristics WEITRON http://www.weitron.com.tw |
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